k3020p/ k3020pg series document number 83505 rev. 1.9, 26-oct-04 vishay semiconductors www.vishay.com 1 17221 6 54 2 3 1 a (+) c (C) nc ~ ~ note: pin 5 must not be connected pb p b -free e3 optocoupler, phototriac output, 400 v v drm features ? isolation materials according to ul 94-vo pollution degree 2 (din/vde 0110 resp. iec 60664) climatic classification 55/100/21 (iec 60068 part 1) special construction: therefore, extra low cou- pling capacity of typical 0.2 pf, high c ommon m ode r ejection i ft offered into 4 groups rated impulse voltage (transient overvoltage) v iotm = 6 kv peak isolation test voltage (partial discharge test volt- age) v pd = 1.6 kv rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak) rated recurring peak voltage (repetitive) v iorm = 600 v rms thickness through insulation 0.75 mm creepage current resi stance according to vde 0303/iec 60112 c omparative t racking i ndex: cti = 275 lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e76222 system code c, double protection bsi: bs en 41003, bs en 60095 (bs 415), bs en 60950 (bs 7002), certificate number 7081 and 7402 din en 60747-5-2 (vde0884) din en 60747-5-5 pending fimko (seti): en 60950, certificate no. 12398 applications monitors air conditioners line switches solid state relay microwave circuits for safe protective separation against electri- cal shock according to safety class ii (reinforced iso- lation): for appl. class i - iv at mains voltage 300 v for appl. class i - iii at mains voltage 600 v accord- ing to din en 60747-5-2(vde0884)/ din en 60747- 5-5 pending, table 2, suitable for. order information g = leadform 10.16 mm; g is not marked on the body description the k3020p/ k3020pg series consists of a pho- totransistor opti cally coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. part remarks k3020p i ft < 30 ma, v drm = 400 v, dip-6 300 mil k3021p i ft < 15 ma, v drm = 400 v, dip-6 300 mil k3022p i ft < 10 ma, v drm = 400 v, dip-6 300 mil K3023P i ft < 5 ma, v drm = 400 v, dip-6 300 mil k3036p i ft < 3.6 ma, v drm = 400 v, dip-6 300 mil k3020pg i ft < 30 ma, v drm = 400 v, dip-6 400 mil k3021pg i ft < 15 ma, v drm = 400 v, dip-6 400 mil k3022pg i ft < 10 ma, v drm = 400 v, dip-6 400 mil K3023Pg i ft < 5 ma, v drm = 400 v, dip-6 400 mil k3036pg i ft < 3.6 ma, v drm = 400 v, dip-6 400 mil
www.vishay.com 2 document number 83505 rev. 1.9, 26-oct-04 k3020p/ k3020pg series vishay semiconductors vde standards these couplers perform safety func tions according to the following equipment standards: din en 60747-5-2(vde0884)/ din en 60747-5-5 pending optocoupler for electric al safety requirements iec 60950/en 60950 office machines (applied for rein forced isolation for mains voltage 400 vrms) vde 0804 telecommunication apparatus and data processing iec 60065 safety for mains-operated electronic and related household appa- ratus. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler 1) related to standard climate 23/50 din 50014 parameter test condition symbol value unit reverse voltage v r 5v forward current i f 80 ma forward surge current t p 10 si fsm 3a power dissipation p diss 100 mw junction temperature t j 100 c parameter test condition symbol value unit off state output terminal voltage v drm 400 v on state rms current i trm 100 ma peak surge current, non- repetitive t p 10 ms i tsm 1.5 a power dissipation p diss 300 mw junction temperature t j 100 c parameter test condition symbol value unit isolation test voltage (rms) v iso 1) 3750 v rms total power dissipation p tot 350 mw ambient temperature range t amb - 40 to + 85 c storage temperature range t stg - 55 to + 100 c soldering temperature 2 mm from case, t 10 s t sld 260 c
k3020p/ k3020pg series document number 83505 rev. 1.9, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output 1) test voltage must be applied within dv/dt ratings coupler note: i ft is defined as a mi nimum trigger current parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit forward peak off-state voltage (repetitive) i drm = 100 na v drm 1) 400 v peak on-state voltage i tm = 100 ma v tm 1.5 3 v critical rate of rise of off-state voltage i ft = 0, i ft = 30 ma dv/dt cr 10 v/ s dv/dt crq 0.1 0.2 v/ s parameter test condition part symbol min ty p. max unit emitting diode trigger current v s = 3 v, r l = 150 ? k3020p i ft 15 30 ma k3020pg i ft 15 30 ma k3021p i ft 815ma k3021pg i ft 815ma k3022p i ft 510ma k3022pg i ft 510ma K3023P i ft 25ma K3023Pg i ft 25ma k3036p i ft 23.6ma k3036pg i ft 23.6ma holding current i f = 10 ma, v s 3 v i h 100 a
www.vishay.com 4 document number 83505 rev. 1.9, 26-oct-04 k3020p/ k3020pg series vishay semiconductors figure 1. test circuit for dv/dt cr and dv/dt crq figure 2. figure 3. motor control circuit v~ r s 95 10813 test condition: dv/dt cr v s = 2/3 v drm (sine wave) r l =33k dv/dt crq v eff =30v (sine wave) r l =2k i ft r l i f i ft 95 10814 dv/dt cr highest value of the rate of rise of off-state voltage which does not cause any switching from the off-state to the on-state dv/dt crq highest value of the rate of rise of communicating voltage which does not switch on the device again, after the voltage has decreased to zero and the trigger current is switched from i ft to zero i f =0 dv/dt crq dv/dt cr m 95 10815 270 ttl +5 v 0.1 f vac ~ galvanic separation
k3020p/ k3020pg series document number 83505 rev. 1.9, 26-oct-04 vishay semiconductors www.vishay.com 5 maximum safety ratings (according to din en 60747-5-2(vde0884)/ din en 60747-5-5 pending) see figure 1 this optocoupler is suitable for safe electric al isolation only within the safety ratings. compliance with the safety ratings shall be ens ured by means of suitable protective circuits. input output coupler insulation rated parameters parameter test condition symbol min ty p. max unit forward current i f 130 ma parameter test condition symbol min ty p. max unit power dissipation p diss 600 mw parameter test condition symbol min ty p. max unit rated impulse voltage v iotm 6kv safety temperature t si 150 c parameter test condition symbol min ty p. max unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 5) v iotm 6kv v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? v io = 500 v, t amb = 150 c (construction test only) r io 10 9 ? figure 4. derating diagram 0 75 150 225 300 375 450 525 600 675 0 25 50 75 100 125 150 t amb (c) 95 10925 p si (mw) i si (ma) figure 5.testpulsediagramforsa mpletestaccordingtodinn 60747-5-2(vd0884)/dinn60747-ic60747 t 13930 t 1 ,t 2 =1to10s t 3 ,t 4 =1s t test =10s t stres =12s v itm v pd v iwm v irm 0 t 1 t test t tr =60s t stres t 3 t 4 t 2
www.vishay.com 6 document number 83505 rev. 1.9, 26-oct-04 k3020p/ k3020pg series vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) figure 6. total power dissipati on vs. ambient temperature figure 7. forward current vs. forward voltage figure 8. relative threshold forward current vs. ambient temperature 0 100 200 300 400 0 20406080100 p Ctotal power dissipation ( mw) t amb C ambient t emperature (c ) 96 11701 tot coupled device phototransistor ir-diode 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f - forward voltag e(v) 96 11862 f i - forward current ( ma ) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 C30C20C100 1020304050607080 t amb C ambient temperature ( c ) 96 11922 v s =3v r l =150? ? i C relative threshold forward current ftrel figure 9. relative on - state vs. ambient temperature figure 10. off - state current vs. ambient temperature figure 11. on - state current vs. ambient temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 C30C20C100 1020304050607080 t amb C ambient temperature ( c ) 96 11923 v C relative onCstate voltage tmrel i f ?i ft i t =100ma 1 10 100 20 30 40 50 60 70 80 90 100 t amb C ambient temperature ( c ) 96 11924 v dr =100v i f =0 i CoffCstatecurrent( na ) drm C250 C200 C150 C100 C50 0 50 100 150 200 250 C2.5C2.0C1.5C1.0C0.5 0.0 0.5 1.0 1.5 2.0 2.5 v tm C onCstate voltag e(v) 96 11926 i C onCstate current ( ma) tm i ft =30ma
k3020p/ k3020pg series document number 83505 rev. 1.9, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in mm C250 C200 C150 C100 C50 0 50 100 150 200 250 C2.5C2.0C1.5C1.0C0.5 0.0 0.5 1.0 1.5 2.0 2.5 v tm C onCstate voltag e(v) 96 11925 i C onCstate current ( ma) tm i ft =15ma figure 12. on - state current vs. ambient temperature 14770
www.vishay.com 8 document number 83505 rev. 1.9, 26-oct-04 k3020p/ k3020pg series vishay semiconductors package dimensions in mm 14771
k3020p/ k3020pg series document number 83505 rev. 1.9, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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